Munich, Germany – 7 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the TDA235E5 and TDA235E0, a dual-phase smart power stage family designed to meet the rapidly growing power density requirements of next-generation AI accelerators and vertical power delivery modules. Integrating Infineon's OptiMOS™ 6 MOSFETs and a dual-phase driver IC in a compact 6 x 6 x 0.8 mm³ package, the new family delivers benchmark power density exceeding 2 A/mm², setting a new reference point for power stage performance in high-current AI processor applications. As hyperscalers and datacenter operators continue to scale AI infrastructure, the demand for power delivery solutions that combine higher current capability with shrinking physical footprints is becoming a critical bottleneck. “Infineon customers are designing AI systems that will define the next decade of computing infrastructure," said Rakesh Renganathan, Vice President Power ICs at Infineon. “The TDA235E5 and TDA235E0 power stages give designers the power density, thermal performance, and design flexibility to move faster and build with confidence, backed by Infineon's full AI server power delivery ecosystem.”The two devices support up to 300 A peak current and 120 A total design current (TDC), making them well suited for next-generation AI xPU accelerators as well as conventional server CPUs in datacenter environments. Both lateral and vertical power delivery configurations are supported, providing the design flexibility required as the industry transitions toward vertical power module architectures in advanced AI processor packages. Superior thermal impedance from junction to top side enables efficient liquid cooling integration, a characteristic that is increasingly important as power levels per processor socket continue to rise and traditional air-cooled thermal budgets are exhausted. Combined with Infineon's digital multiphase controllers, the power stages support flexible, scalable multi-rail architectures that reduce time to deployment in fast-evolving AI server platforms. The TDA235E5 and TDA235E0 integrate into Infineon's end-to-end AI server power delivery ecosystem, spanning the full power chain from grid interface to processor core rails. By combining the complementary strengths of silicon, silicon carbide, and gallium nitride, Infineon provides datacenter customers with a proven, scalable path to the highest efficiency, robustness, and power density available for AI-optimized infrastructure. The datacenter power delivery market is one of the semiconductor industry's fastest-growing demand segments driving Infineon's continued product investment to serve this opportunity at the component level where power density requirements are most critical. AvailabilityEngineering samples for TDA235E5 and TDA235E0 are now available for customer evaluation. Find more information here. 

Munich, Germany – 8 September 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has introduced the OPTIREG™ PMIC TLE9744QK, a fully integrated Power Management IC (PMIC) specifically designed for high-voltage traction inverter applications in electric and hybrid vehicles. It consolidates complete power-supply functions, resolver excitation, and a dedicated safety engine into a single device. This simplifies traction inverter Electronic Control Unit (ECU) design and addresses the complex challenge of supplying multiple isolated power rails for microcontrollers, communication modules, and sensors. By replacing multiple discrete components with this single-chip solution, the TLE9744QK directly reduces system cost and complexity. This integration significantly lowers the bill-of-materials (BOM) count and shrinks the PCB footprint by up to 70 percent for the replaced devices, while enhancing overall system reliability and functional safety.This integration is achieved by embedding critical peripheral functions directly into the silicon. The OPTIREG TLE9744QK can generate the resolver excitation signal internally, eliminating the need for external resolver driver and monitoring circuits. Furthermore, it offers broad power supply compatibility and functional interoperability with a wide range of microcontrollers and gate drivers. This flexibility allows system designers to leverage existing MCU platforms without extensive hardware redesigns, thereby accelerating time-to-market. Support for off-board sensor supply provides additional layout flexibility for optimized system design.The device further enhances system reliability and safety through an independent hardware architecture. The Integrated Safety Logic (ISL) continuously supervises critical parameters, including phase currents, DC-link voltage, and the health status of the MCU and gate drivers. Acting as a secondary, independent safety path, the ISL determines and enforces a safe state in the event of main MCU dysfunction. To ensure this protection remains active during power faults, a redundant supply input keeps the ISL operational if the main low-voltage supply fails. This independent design ensures that safety functions are not compromised by a main low-voltage supply failure, fulfilling ASIL-D compliance as developed according to ISO 26262 standards.AvailabilityThe OPTIREG TLE9744QK is available now. Samples, evaluation boards, reference designs, documentation, software, and tools are available upon request. Further information is available at www.infineon.com/part/TLE9744QK.

Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resistance, achieving up to 27% efficiency improvement over currently available competitive 1200 V solutionsTechnology extends Wolfspeed’s commitment to developing SiC power devices that enable truly durable systemsBuilt on Wolfspeed’s qualified, ramp-ready and highly automated 200 mm manufacturing platform, providing automotive and industrial customers with a rapid, low-risk path to marketDURHAM, N.C. ­— June 9, 2026 — Wolfspeed, an industry leader in silicon carbide, has introduced its fifth technology generation, demonstrating a substantial performance leap in efficiency for next-generation 1200 V and 750 V automotive and industrial applications.                                         1200 V performance trend of chip RSP (total area) at 175°C“With Gen 4, Wolfspeed delivered the switching breakthrough our customers needed, and less than two years later we’re introducing Gen 5 that gives engineers the most current possible with a 5x5 mm silicon carbide footprint,” said Dr. Cengiz Balkas, Wolfspeed Chief Business Officer. “What excites me most isn't just the pace of our innovation; it's what this technology unlocks for our customers: an accelerated path to smarter, more efficient, compact systems made for real-world conditions.”Automotive OEMs continue to face pressure to meet electrification targets, while vehicle cost, safety, mileage range, and charging infrastructure availability remain barriers to broader consumer adoption of EVs. Wolfspeed’s Gen 5 technology was designed to holistically address those barriers and sets a new benchmark for specific on-resistance (RSP) — a core figure of merit for efficiency relative to the MOSFET's active die area. Gen 5 products enable system architects to design more compact traction inverters and improve mileage per charge and right-size costly EV batteries. They also unlock new SiC opportunities by replacing mechanical relays with solid-state circuit breakers and set new efficiency standards for EV charging infrastructure. The benefits extend well beyond automotive, with applications like industrial power supplies equally positioned to take advantage of the Gen 5’s uncompromised switching performance.Enabling unrivaled amperage per SiC areaGen 5-based systems can achieve the highest current possible at high temperatures when compared to competitive 5 x 5 mm footprint silicon carbide MOSFETs. Wolfspeed’s continued optimization of RDS(ON)resolves two compelling design challenges:It significantly improves system-level conduction losses via an up to 27% reduction in RSP over today’s commercially available competitive 1200-V solutions. The 1200 V QEM50120-25D10 achieves a 175℃ chip-level RSP of 3.4 mΩ-cm2, and the 750 V QEM50075-025D10 achieves a 175℃ chip-level RSP of 2.0 mΩ-cm2.It reduces the need for system-level design margin with ultra-low +/- 18% RDS(ON) distribution for both voltage nodes.Powering designs that will endureWolfspeed Gen 5 includes the same body diode introduced with the Gen 4 technology platform but has an improved junction temperature of 200℃ continuous (215℃ limited life) – further demonstrating Wolfspeed’s commitment to helping customers build truly durable systems. The MOSFETs achieve benchmark RDS(ON)while maintaining excellent switching energy with the soft body diode; overall switching losses are also reduced with further improvement in reverse recovery charge.Designed on a commercially mature platformGen 5 gives customers a direct, low-risk path from design-in to volume production with no impact to automotive ramp readiness, even with surging AI demand. This is the second Wolfspeed MOSFET technology generation to be designed, manufactured, and qualified within Wolfspeed’s ramp-ready 200 mm device fabrication facility in Mohawk Valley, N.Y. New product introductions (NPI), sampling, and customer validation will be completed using 200 mm production material. Furthermore, no new manufacturing toolsets are required for volume production.“Our planar MOSFET technology still has innovation runway. We established Gen 5 on tools and processes our customers are familiar with to create a low-risk upgrade path for next-generation programs,” said Dr. Adam Barkley, Vice President of Power Device and Package Development. “For customers facing compressed development timelines, that means faster validation, faster qualification, and faster time to market — without sacrificing the performance they know and trust.”To gain insights into how Wolfspeed achieved the above performance, read Dr. Barkley’s article Engineering for Outcomes: Three Ways Gen 5 Achieves Real-World Performance.Availability & ResourcesSamples for QEM50120-025D10 and QEM50075-025D10 are available for select customers through Wolfspeed’s direct sales representatives. New 750 V to 1200 V products are expected to continue launching throughout 2026 and into early 2027 as market demand and customer requirements become finalized.Wolfspeed is proud to be demonstrating Gen 5 this week at PCIM Booth 7-435.About Wolfspeed Inc.Wolfspeed (NYSE: WOLF) leads the market in the worldwide adoption of silicon carbide technologies that power the world’s most disruptive innovations. As the pioneers of silicon carbide, and creators of the most advanced semiconductor technology on earth, we are committed to powering a better world for everyone. Through silicon carbide material, Power Modules, Discrete Power Devices and Power Die Products targeted for various applications, we will bring you The Power to Make It Real™.  Learn more at wolfspeed.com.Wolfspeed® is a registered trademark and The Power to Make It Real™ is a trademark of Wolfspeed, Inc.Forward-Looking StatementsThis press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause Wolfspeed’s actual results to differ materially from those indicated in the forward-looking statements. Forward-looking statements by their nature address matters that are, to different degrees, uncertain, such as statements about Wolfspeed’s strategic plans, priorities, growth opportunities, and ability to achieve profitability. Actual results could differ materially due to factors detailed in Wolfspeed’s filings with the U.S. Securities and Exchange Commission (“SEC”), including its most recent Annual Report on Form 10-K and subsequent SEC filings. These forward-looking statements represent Wolfspeed’s judgment as of the date of this release. Except as required under U.S. federal securities laws, Wolfspeed disclaims any intent or obligation to update any forward-looking statements after the date of this release.

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