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NEWS
Gen 4 Silicon Carbide Technology: Redefining Performance & Durability in High-Power Applications
This white paper highlights Wolfspeed’s fourth-generation silicon carbide (SiC) MOSFET technology, engineered for high-power electronics applications. Building on a legacy of SiC innovation, Wolfspeed has regularly unveiled cutting-edge technology solutions redefining industry benchmarks. Before the Gen 4 release, the third-generation SiC MOSFETs balanced important design elements for a broad spectrum of use cases, setting a benchmark for well-rounded performance in hard-switching applications.In a market where some players narrowly focus on specific figures of merit (FOM), such as conduction losses, room temperature RDS(on), or RDS(on) × Qg, Wolfspeed takes a broader and more integrated approach. By simultaneously optimizing conduction losses, switching behavior, ruggedness, and reliability, Wolfspeed’s design philosophy ensures comprehensive performance. This commitment continues with the Gen 4 MOSFETs, delivering enhanced metrics that simplify system design and usability without compromising the ruggedness and durability Wolfspeed is known for.Targeted at high-power automotive, industrial, and renewable energy systems, Gen 4 MOSFETs constitute a paradigm change in SiC technology. These devices provide a versatile foundation enabling a long-term road map of application-optimized bare die, module, and discrete products. Every Gen 4-based design focuses on three performance vectors: holistic system efficiency, remarkable durability, and low system cost—all of which let designers reach before unheard-of performance and value.Please visit : Gen 4 Silicon Carbide Technology White Paper | Wolfspeed
2025-07-02
NEWS
64GT/s PAM4 Linear ReDriver from Diodes Incorporated Delivers Enhanced Signal Quality for PCIe® 6.0
Diodes Incorporated (Nasdaq: DIOD) introduces the industry’s first ReDriver™ to reach PCI Express® (PCIe®) 6.0 protocol speeds (up to 64 GT/s) while being backwards-compatible with PCIe 5.0/4.0/3.0 protocols. The PI3EQX64904 is a low-power, high-performance, 64GT/s, four-differential-channel, PAM4, linear ReDriver. Target applications include AI data centers (storage and servers), workstations, 5G networking, CPU-to-network (PCIe NIC card) and CPU-to-storage (NVME) interconnects, and CPU-to-CPU interconnects within high-performance computing (HPC) clusters.The PI3EQX64904 ReDriver provides optimized linear equalization with tunable low-frequency and high-frequency zeros at the equalizer stage to boost the PAM4 signal quality of high-speed PCIe interfaces. It optimizes performance over a variety of physical media by reducing intersymbol interference, correcting for known channel losses at the transmitter, and restoring signal integrity at the receiver. This results in an improved eye pattern at the receiver with the margins required to deliver reliable PCIe communications at 64GT/s PAM4 with low bit error rates (BER).The PI3EQX64904 meets the Modern Standby mode requirements outlined by Microsoft Corporation of consuming less than 5mW of power when the system is in PCIe L.1.2 deep standby mode. The device also delivers elevated linearity and ultra-low jitter characteristics. Linear ReDrivers are commonly used to achieve PCB trace extension while minimizing cost and power consumption. They can also deliver lower latency.Requiring a supply voltage of 3.3V ±0.3V, the PI3EQX64904 ReDriver can operate over an industrial temperature range of -40°C to +85°C. The device is offered in a 31-contact W-LGA-31L (6.1mm x 2.7mm) package and is priced at $5.00 each in 3,000-piece quantities.Diodes will be showcasing this new product at the PCI-SIG® Developers Conference, booth #11.For further information on how ReDrivers can improve signal integrity, please visit: https://www.diodes.com/products/connectivity/signal-integrity-redriversrepeaterssignal-conditioners/# About Diodes IncorporatedDiodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of analog and discrete power solutions combined with leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific products and solutions-focused sales, coupled with global operations including engineering, testing, manufacturing, and customer service, enable us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com. 
2025-07-02
NEWS
SiC Schottky Diodes from Diodes Incorporated Deliver Industry-Leading FOM and System Efficiency
Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announces the expansion of its silicon carbide (SiC) product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the DSCxxA065LP series is housed in the ultra-thermally efficient T-DFN8080-4 package and is designed for high-efficiency power switching applications, such as DC to DC and AC to DC conversion, renewable energy, data centers (especially those that process heavy artificial intelligence (AI) workloads), and industrial motor drives.The industry-leading FOM, calculated as FOM=QC×VF, is attributed to:Negligible switching losses, thanks to the absence of reverse recovery current and low capacitive charge (QC), andLow forward voltage (VF) minimizing conduction losses, enhancing overall power efficiency.These characteristics make them ideal for high-speed switching circuits.The high-performance SiC diodes are also notable for their lowest reverse leakage (IR) in the industry, at 20µA (max.). This minimizes heat dissipation and conduction losses, improving system stability and reliability, particularly in comparison to silicon Schottky devices. This reduction in heat dissipation also lowers cooling costs and operating expenses.The compact and low-profile T-DFN8080-4 (typ. 8mm x 8mm x 1mm) surface mount package incorporates a large underside heat pad, which reduces thermal resistance. Requiring less board space and providing a larger heat pad, the T‑DFN8080-4 is an ideal alternative to the TO252 (DPAK). This benefits circuit designs by increasing power density, reducing overall solution size, and lowering the cooling budget.The 4A DSC04A065LP, 6A DSC06A065LP, 8A DSC08A065LP, 10A DSC10A065LP, and 12A DSC12A065LP are available at $1.25, $1.55, $1.80, $2.10, and $2.40, respectively, each in 2,500-piece quantities. About Diodes IncorporatedDiodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of analog and discrete power solutions combined with leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific products and solutions-focused sales, coupled with global operations including engineering, testing, manufacturing, and customer service, enable us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com.
2025-07-02
NEWS
12-Bit I2C 3D Linear Hall-Effect Sensor from Diodes Incorporated Simplifies Rotary Motion and Proxim
Diodes Incorporated (Nasdaq: DIOD) today introduces its first automotive-compliant* 3D linear Hall effect sensor. The AH4930Q detects the magnetic field in the X, Y, and Z directions, allowing for reliable and high-precision contactless rotary motion and proximity detection. Applications include rotary and push selectors on infotainment systems, stalk gear shifters, door handles and locks, and powered seat adjusters.The AH4930Q integrates a 12-bit temperature sensor for accurate on-chip compensation. Its robust signal path and 12-bit data converter via ADC provide high resolution for each measurement direction down to 1 Gauss (0.1mT) per bit for precise positional accuracy. The implemented I2C interface enables seamless communication for measurement data reading and runtime programming with host systems as fast as 1Mbps to support real-time adjustments.The device has three operating modes plus a power-down mode where it consumes only 9nA. Its three operating modes provide a power consumption-data acquisition compromise, including an ultra-low-power mode consuming only 13µA (10Hz), to its fast-sampling mode of 3.8mA (3.3kHz) for constant measurement functionality. With a 10µs wake-up time, 4µs response time, and wide bandwidth, the AH4930Q delivers ultra-fast data acquisition even for the most demanding applications.The AH4930Q operates on supply voltages from 2.8V to 5.5V, and a temperature range from -40°C to +125°C. The 3D linear Hall effect sensor is housed in the industry-standard 6-pin SOT26 (Type A1) package and is available at $0.50 for 1,000-piece quantities. A standard-compliance version, the AH4930, is also available for industrial and commercial applications. About Diodes IncorporatedDiodes Incorporated (Nasdaq: DIOD), a Standard and Poor’s SmallCap 600 and Russell 3000 Index company, delivers high-quality semiconductor products to the world’s leading companies in the automotive, industrial, computing, consumer electronics, and communications markets. We leverage our expanded product portfolio of analog and discrete power solutions combined with leading-edge packaging technology to meet customers’ needs. Our broad range of application-specific products and solutions-focused sales, coupled with global operations including engineering, testing, manufacturing, and customer service, enable us to be a premier provider for high-volume, high-growth markets. For more information, visit www.diodes.com. *Automotive-compliant—qualified to AEC-Q100 Grade 1, manufactured in facilities certified to IATF 16949, supporting PPAP documents.The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.All other trademarks are the property of their respective owners.© 2025 Diodes Incorporated. All Rights Reserved.
2025-07-02

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