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Wolfspeed Launches New Gen 4 MOSFET Technology Platform
Wolfspeed Launches New Gen 4 MOSFET Technology Platform to Deliver Breakthrough Performance in Real-World Conditions for High-Power Applicationsi. Wolfspeed’s highly flexible Gen 4 MOSFET technology platform supports long-term roadmaps for high-performance, application-optimized productsii. Holistic efficiency improvements enable reduced system costs and development time while maximizing application lifetime, representing a pivotal progression for silicon carbide technologyiii. Wolfspeed’s U.S- based silicon carbide substrate and device manufacturing supports domestic security protectionDURHAM, N.C., January 22, 2025 – Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system cost and development time. Engineered to simplify switching behaviors and design challenges commonly experienced in high-power designs, Gen 4 charts a long-term roadmap across Wolfspeed’s product categories, including power modules, discrete components, and bare die products. These products are currently available in the 750V, 1200V and 2300V classes.“We understand that each application’s design comes with a unique set of requirements,” said Jay Cameron, senior vice president of Wolfspeed power products. “From its inception, our goal for Gen 4 has been to improve overall system efficiency in real-world operating environments, with a focus on delivering maximum performance at the system level. Gen 4 enables design engineers to create more efficient, longer-lasting systems that perform well in tough operating environments at a better overall system cost.”Silicon carbide technology is one of the fastest growing components of both the power device market and the greater semiconductor industry. A superior alternative to silicon, silicon carbide is ideal for high power applications – such as EV powertrains, e-mobility, renewable energy systems, battery energy storage systems, and AI data centers – that unlocks improved performance and lower system costs.As the U.S. and the globe pursue more efficient and environmentally friendly solutions to meet the world’s ever-increasing need for high-voltage energy sources, it is crucial that the U.S. continue to make strategic investments to cement its technological dominance, while continuing to spur American innovation in critical technologies.Wolfspeed is the only silicon carbide producer with both silicon carbide material and silicon carbide device fabrication facilities based in the United States, a factor that is becoming increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production.“Innovative technology unlocks business opportunity,” said Devin Dilley, president and chief product officer, EPC Power, a U.S.-based utility-scale inverter manufacturer. “Wolfspeed’s new Gen 4 SiC technology is enabling EPC Power to make a paradigm shift in how energy is created and stored globally.”“As the world-leader in silicon carbide technology, based on American IP and delivered through U.S.-based fabrication facilities, Wolfspeed has been relentless in our drive to continue to innovate and bring our silicon carbide solutions to more and more industries with increasingly challenging use cases,” said Wolfspeed Executive Chairman, Tom Werner. “Our Gen 4 platform will be delivered via our highly efficient 200mm wafers, which will enable us to deliver products on a scale and level of yield not seen in this industry before.”Wolfspeed’s Gen 4 platform was designed to comprehensively improve system efficiency and prolong application life, even in harshest of environments, while helping to reduce system cost and development time. The technology will deliver significant performance enhancements for designers of high-power automotive, industrial, and renewable energy systems, with key benefits including:Holistic System Efficiency: Delivering up to a 21% reduction in on-resistance at operating temperatures with up to 15% lower switching losses.Durability: Ensuring reliable performance, including a short-circuit withstand time of up to 2.3 µS to provide additional safety margin.Lower System Cost: Streamlining design processes to reduce system costs and development time.Learn more in Wolfspeed’s white paper “Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications”.AvailabilityWolfspeed’s Gen 4 products are available in 750V, 1200V and 2300V nodes, with options for power modules, discrete components, and bare die products. New product introductions, including additional footprints and RDSON ranges, will be available throughout 2025 and early 2026.
2025-10-28
